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Samsung Has Begun Production of 512GB Flash Storage For Next Gen Phones

Samsung Has Begun Production of 512GB Flash Storage For Next Gen Phones

Together, they double the density of the previous 48-layer V-NAND 256GB eUFS memory.

In one of the most interesting developments, Samsung has reportedly kicked off the mass production of 512GB eUFS storage modules for mobile phones. The top candidate right now is the Galaxy S9, which is expected to be Samsung's next flagship Android smartphone.

Earlier today, Samsung revealed some technical information about the new flash memory for next-gen mobile devices, advertising it as "the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro SD cards". For example, the new high-capacity eUFS enables a flagship smartphone to store approximately 130 4K Ultra HD (3840x2160) video clips of a 10-minute duration, * which is about a tenfold increase over a 64GB eUFS which allows storing only about 13 of the same-sized video clips.

This brings us to Samsung's announcement of the 512GB eUFS chip that should provide "unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets".

Samsung didn't say which of its upcoming new phones will get the 512GB eUFS first. The controller chip also helps by speeding up the process that converts logical block addresses to physical blocks.

Life in prison for man who tried to kill Jacksonville detective, son
The officer, who was taking his child to school at the time, made a decision to pull Rojas after noticing the wild driving. Rojas' shots missed the officer's son, AP reports, but ended up hitting the officer three times, according to police.


Samsung is promising speeds of 860MB/s while reading and 255 MB/s while writing the data.

The new eUFS storage is also said to read 42,000 IOPS (input/output per second) and write 40,000 IOPS for random operation. This will improve the speed of storage-intensive tasks such as high-resolution burst photos, file searches, and downloading videos in dual app mode, the company states.

While most people use external storage such as SIM cards, internal storage offers faster performance. Samsung is utilizing their own 64-layer 512-gigabit (Gb) V-NAND chips for these, which will give you speedy copy and write speeds even at this size.

Our take: 512GB of UFS storage seems like a dream, but the question is: will OEMs release devices with such an incredibly high amount of internal storage?


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